N-channel silicon carbide MOSFET uses CoolSiC trench technology for 1200 V blocking capability and 350 mΩ typical on-resistance at 25 °C. The surface-mount D2PAK 7-pin package provides a sense pin for optimized switching and uses .XT interconnection technology. The device supports a -55 °C to 175 °C operating temperature range, 4.7 A maximum drain current at 25 °C, and 65 W maximum power dissipation at 25 °C. Tape-and-reel packaging is specified with 1000 pieces per reel, and the orderable device is lead-free, halogen-free, and RoHS compliant.
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| Drain-source voltage | 1200V |
| Drain current at 25°C | 4.7 maxA |
| Drain-source on-resistance at Tj 25°C | 350mΩ |
| Polarity | N-channel |
| Input capacitance | 196pF |
| Output capacitance | 9nF |
| Gate-drain charge | 1.2nC |
| Total gate charge | 5.9nC |
| Power dissipation at TA 25°C | 65 maxW |
| Junction temperature maximum | 175°C |
| Operating temperature range | -55 to 175°C |
| Thermal resistance junction-to-case | 2.3 maxK/W |
| Thermal resistance junction-to-ambient | 62 maxK/W |
| Mounting | SMD |
| Package | TO-263-7 |
| Infineon package | PG-TO263-7 |
| Pin count | 7pins |
| Qualification | Industrial |
| Moisture sensitivity level | 1 |
| Short-circuit withstand time | 3µs |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen-free | Yes |
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