
Power Field-Effect Transistor, 75A I(D), 80V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPA037N08N3GXKSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPA037N08N3GXKSA1 technical specifications.
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.1nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 3.7mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 41W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 23ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPA037N08N3GXKSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
