N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8.6mΩ on-state resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 37.5W. Key electrical characteristics include a 20V gate-source voltage rating and fast switching times with an 8ns fall time.
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Infineon IPA086N10N3GXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8.6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 3.98nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 8.6mR |
| Package Quantity | 500 |
| Polarity | N-CHANNEL |
| Power Dissipation | 37.5W |
| Rds On Max | 8.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 16ns |
| Width | 4.85mm |
| RoHS | Compliant |
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