Power Field-Effect Transistor, 40A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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Infineon IPA100N08N3GXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.41nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 35W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13ns |
| RoHS | Compliant |
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