
N-Channel Power MOSFET, 500V breakdown voltage, 17A continuous drain current, and 199mΩ Rds On. Features include 139W power dissipation, 1.8nF input capacitance, and 10.65mm length. Operates from -55°C to 150°C, with a 20V gate-source voltage rating. Packaged in TO-220-3, this RoHS compliant component is suitable for through-hole termination.
Infineon IPA50R199CP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 199mR |
| Dual Supply Voltage | 550V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 1.8nF |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 4.85mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPA50R199CP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
