N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 9A Continuous Drain Current, and 399mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220-3 package, 83W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 14ns fall time, 35ns turn-on delay, and 80ns turn-off delay, with an input capacitance of 890pF. The device is RoHS compliant and Halogen Free.
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Infineon IPA50R399CP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 399mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 890pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 399mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| RoHS | Compliant |
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