Automotive N-channel Power MOSFET featuring 500V drain-source voltage and 11.1A continuous drain current. This single-element transistor utilizes CoolMOS CE technology and operates in enhancement mode. Housed in a TO-220FP package with 3 pins and a tab, it offers through-hole mounting and a maximum power dissipation of 28000mW. Key electrical characteristics include a 20V gate-source voltage, 3.5V gate threshold voltage, and 500mOhm drain-source resistance. Operating temperature range is -40°C to 150°C.
PackageTO-220FP
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon IPA50R500CE technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.99 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS CE |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 11.1A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 500@13VmOhm |
| Typical Gate Charge @ Vgs | 18.7@10VnC |
| Typical Gate Charge @ 10V | 18.7nC |
| Typical Input Capacitance @ Vds | 433@100VpF |
| Maximum Power Dissipation | 28000mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPA50R500CE Datasheet
Download the complete datasheet for Infineon IPA50R500CE to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.