The IPA50R650CEXKSA1 is a N-CHANNEL MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 6.1A and a drain to source breakdown voltage of 550V. The device is packaged in a rail/Tube format with a packaging quantity of 500. It is RoHS compliant and has a power dissipation of 27W.
PolarityN-CHANNEL
Power27W
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Technical Specifications
Infineon IPA50R650CEXKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 27W |
| RoHS Compliant | Yes |
| Series | IPA50R650 |
| Turn-Off Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA50R650CEXKSA1 Datasheet
Download the complete datasheet for Infineon IPA50R650CEXKSA1 to view detailed technical specifications.
No datasheet is available for this part.