This device is an N-channel CoolMOS™ CE power MOSFET rated for 500 V drain-source voltage and 5 A continuous drain current. It features a maximum RDS(on) of 800 mΩ at 10 V gate drive, a typical total gate charge of 12.4 nC, and a maximum power dissipation of 26 W. The transistor is supplied in a TO220 FullPAK through-hole package with 3 pins and operates from -40 °C to 150 °C. Infineon highlights low gate charge, low stored energy in COSS, an integrated gate resistor, and a fully insulated package for hard-switching applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPA50R800CE datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPA50R800CE technical specifications.
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IPA50R800CE to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
