The IPA50R800CEXKSA1 is a N-CHANNEL MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5A and a drain to source breakdown voltage of 550V. The device is packaged in a rail/tube format with 500 units per package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power26W
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Technical Specifications
Infineon IPA50R800CEXKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 15.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 26W |
| RoHS Compliant | Yes |
| Series | IPA50R800 |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA50R800CEXKSA1 Datasheet
Download the complete datasheet for Infineon IPA50R800CEXKSA1 to view detailed technical specifications.
No datasheet is available for this part.