Power Field-Effect Transistor, 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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Infineon IPA50R950CEXKSA2 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 950mR |
| Fall Time | 19.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 231pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 25.7W |
| On-State Resistance | 950mR |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 26W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
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