N-Channel Power MOSFET featuring 600V drain-source voltage and 37.9A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 99mΩ Rds On, with fast switching characteristics including a 15ns turn-on delay and 6ns fall time. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 150°C and has a maximum power dissipation of 35W. The component is RoHS compliant, lead-free, and halogen-free.
PackageTO-220-3
MountingThrough Hole
Power35W
Quick Jump:
Technical Specifications
Infineon IPA60R099C6XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 37.9A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.66nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA60R099C6XKSA1 Datasheet
Download the complete datasheet for Infineon IPA60R099C6XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.