This N-channel superjunction power MOSFET is rated for 600 V drain-source voltage and 12 A continuous drain current in a TO-220 FullPAK through-hole package. It specifies a maximum RDS(on) of 99 mΩ at 10 V gate drive, a typical total gate charge of 42 nC, and up to 33 W power dissipation. The device operates across a junction temperature range from -55 °C to 150 °C and lists thermal resistance of 3.79 K/W junction-to-case and 80 K/W junction-to-ambient. It is intended for high-efficiency hard-switching power stages and is described for PFC and LLC topologies. The product page identifies it as RoHS compliant and lead-free.
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| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
