This N-channel superjunction power MOSFET is rated for 600 V drain-source voltage and 30 A continuous drain current. It uses Infineon's CoolMOS™ P6 technology to reduce gate charge and support efficient hard-switching and soft-switching topologies. The device is offered in a TO-220 FullPAK through-hole package with 125 mΩ maximum RDS(on), 56 nC typical gate charge, and 34 W power dissipation. Operating junction temperature spans from -55 °C to 150 °C, with thermal resistance values of 80 K/W junction-to-ambient and 3.65 K/W junction-to-case. The standard ordering option IPA60R125P6XKSA1 is supplied in tube packaging.
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Infineon IPA60R125P6 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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