N-channel Power MOSFET with 600V drain-source voltage and 23.8A continuous drain current. Features 160mΩ drain-source resistance at 10V gate-source voltage and 75nC typical gate charge. This single-element transistor utilizes CoolMOS technology and is housed in a 3-pin TO-220FP through-hole package with a tab. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 34W.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Infineon IPA60R160C6 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 16 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 23.8A |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Gate Charge @ Vgs | 75@10VnC |
| Typical Gate Charge @ 10V | 75nC |
| Typical Input Capacitance @ Vds | 1660@100VpF |
| Maximum Power Dissipation | 34000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPA60R160C6 Datasheet
Download the complete datasheet for Infineon IPA60R160C6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.