N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 23.8A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 160mΩ on-state resistance and 34W power dissipation. Designed for efficient switching, it exhibits a 13ns turn-on delay and 8ns fall time. Packaged in a TO-220-3 configuration, this RoHS and Halogen Free component operates from -55°C to 150°C.
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Infineon IPA60R160C6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 23.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 160mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.83mm |
| Input Capacitance | 1.66nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| On-State Resistance | 160mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 13ns |
| Width | 4.85mm |
| RoHS | Compliant |
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