N-Channel Power MOSFET featuring 650V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 199mΩ Rds On and 10ns turn-on delay. Designed for high-efficiency power applications, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 34W. Packaged in a TO-220-3 configuration, this component is RoHS compliant and halogen-free.
PackageTO-220-3
Power34W
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Technical Specifications
Infineon IPA60R199CPXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 1.52nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 34W |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA60R199CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPA60R199CPXKSA1 to view detailed technical specifications.
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