N-channel power MOSFET featuring 600V drain-source breakdown voltage and 12A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 250mΩ on-state resistance and 650V dual supply voltage. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 150°C with a maximum power dissipation of 33W. Key switching characteristics include a 40ns turn-on delay and 12ns fall time.
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Infineon IPA60R250CPXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Nominal Vgs | 3V |
| On-State Resistance | 250mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 40ns |
| RoHS | Compliant |
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