The IPA60R280E6XKSA1 is a N-CHANNEL MOSFET from Infineon with a maximum drain to source breakdown voltage of 650V and a continuous drain current of 13.8A. It features a drain to source resistance of 280mR and an on-state resistance of 280mR. The device is packaged in a TO-220-3 package and is rated for a maximum power dissipation of 32W. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageTO-220-3
PolarityN-CHANNEL
Power32W
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Technical Specifications
Infineon IPA60R280E6XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 280mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Number of Elements | 1 |
| On-State Resistance | 280mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 71ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPA60R280E6XKSA1 Datasheet
Download the complete datasheet for Infineon IPA60R280E6XKSA1 to view detailed technical specifications.
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