
N-Channel Power MOSFET, 600V Drain-Source Voltage, 13.8A Continuous Drain Current. Features 252mΩ Drain-Source On-Resistance, 1.19nF Input Capacitance, and 32W Power Dissipation. Packaged in a TO-220FP-3 through-hole mount, this component offers fast switching with a 6ns fall time. It operates within a -55°C to 150°C temperature range and is RoHS and Halogen Free compliant.
Infineon IPA60R280P6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Resistance | 252mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 6ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ P6 |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPA60R280P6XKSA1 to view detailed technical specifications.
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