
N-channel MOSFET, 600V Vdss, 12A continuous drain current, and 330mR Rds On. Features TO-220-3 through-hole package, 32W power dissipation, and 150°C max operating temperature. Includes 7ns fall time, 12ns turn-on delay, and 33ns turn-off delay. Halogen and lead-free, RoHS compliant.
Infineon IPA60R330P6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 297mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.01nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Number of Channels | 1 |
| On-State Resistance | 330mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 32W |
| Rds On Max | 330mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ P6 |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.211644oz |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPA60R330P6XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
