N-channel Power MOSFET featuring 600V drain-source voltage and 0.36 Ohm on-resistance. This single-element silicon Metal-oxide Semiconductor FET is designed for high-power applications. It offers a minimum operating temperature of -40°C and is available in TO-220AB and TO-220FP packages with 3 terminals.
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Technical Specifications
Infineon IPA60R360P7SXKSA1 technical specifications.
General
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPA60R360P7SXKSA1 Datasheet
Download the complete datasheet for Infineon IPA60R360P7SXKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.