N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 750mΩ on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 5.7A and a maximum power dissipation of 27W. Designed for efficient switching, it exhibits a turn-on delay time of 9ns and a fall time of 12ns. The component is housed in a TO-220-3 package, is RoHS compliant, and halogen-free.
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Infineon IPA60R750E6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 680mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 373pF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| On-State Resistance | 750mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 27W |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 9ns |
| Width | 4.9mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPA60R750E6XKSA1 to view detailed technical specifications.
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