Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3
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Infineon IPA65R110CFD technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 31.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.24nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34.7W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| RoHS | Compliant |
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