N-Channel Power MOSFET featuring 650V drain-source voltage and 190mΩ on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 20.2A and a maximum power dissipation of 34W. Designed for high-efficiency power applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-220-3 configuration. The component is halogen-free, lead-free, and RoHS compliant.
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Infineon IPA65R190E6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20.2A |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 1.62nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Number of Elements | 1 |
| On-State Resistance | 190mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 112ns |
| Turn-On Delay Time | 12ns |
| Width | 4.85mm |
| RoHS | Compliant |
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