N-Channel Power MOSFET featuring 650V drain-source voltage and 10.6A continuous drain current. Offers 380mΩ on-state resistance and 31W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-220-3 package, with lead-free and halogen-free compliance. Key electrical characteristics include 710pF input capacitance and fast switching times with a 11ns fall time.
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Infineon IPA65R380C6XKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| On-State Resistance | 380mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 12ns |
| Width | 4.85mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPA65R380C6XKSA1 to view detailed technical specifications.
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