IPA65R420CFD

Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PAK-3

PackageTO-220-3

Resistance0.42R

PolarityN-CHANNEL

Power31.25W

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Infineon IPA65R420CFD technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	8.7A
Drain to Source Breakdown Voltage	650V
Drain to Source Resistance	420mR
Drain to Source Voltage (Vdss)	650V
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	870pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	31.2W
Number of Elements	1
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	31.25W
Rds On Max	420mR
Resistance	0.42R
RoHS Compliant	Yes
Series	CoolMOS™
Turn-Off Delay Time	38ns
Turn-On Delay Time	10ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.