This device is a 700 V N-channel power MOSFET built on CoolMOS™ P7 technology. It provides a maximum drain-source on-resistance of 360 mΩ at 10 V gate drive and a maximum continuous drain current of 12.5 A, with a pulsed drain current rating of 34 A. The part is supplied in a 3-pin TO220 FullPAK through-hole package. Its operating junction temperature range is -40 °C to 150 °C, with maximum power dissipation of 26.5 W. Typical gate charge is 16.4 nC and the maximum thermal resistance values are 4.7 K/W junction-to-case and 80 K/W junction-to-ambient.
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Infineon IPA70R360P7S technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-281 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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