This N-channel superjunction power MOSFET is rated for 700 V and 8.5 A and uses Infineon's CoolMOS™ P7 technology in a fully insulated TO-220 FullPAK through-hole package. It specifies up to 600 mΩ RDS(on) at 10 V, 10.5 nC typical gate charge, and 24.9 W maximum power dissipation. The device operates from -40 °C to 150 °C, with thermal resistance values of 5 K/W junction-to-case and 80 K/W junction-to-ambient. Infineon positions it for low-power SMPS and flyback designs, with application examples including vacuum cleaners and LED lighting system designs. The ordering information lists a lead-free, halogen-free, RoHS-compliant tube pack.
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Infineon IPA70R600P7S technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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