N-Channel Power MOSFET, 900V Drain-Source Breakdown Voltage, 1.2 Ohm Drain-Source Resistance (Rds On Max). Features 5.1A Continuous Drain Current (ID), 31W Max Power Dissipation, and 710pF Input Capacitance. Operates within a temperature range of -55°C to 150°C. Packaged in TO-220-3, this silicon Metal-oxide Semiconductor FET is Halogen Free, Lead Free, and RoHS Compliant.
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Infineon IPA90R1K2C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 16.15mm |
| Input Capacitance | 710pF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
| Width | 4.85mm |
| RoHS | Compliant |
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