N-Channel Power MOSFET with 900V drain-source breakdown voltage and 6.9A continuous drain current. Features 800mΩ Rds(on) and 33W power dissipation in a TO-220FP package. Operates from -55°C to 150°C with a 3V threshold voltage. Includes 70ns turn-on delay and 32ns fall time. RoHS compliant and halogen-free.
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Infineon IPA90R800C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
| RoHS | Compliant |
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