N-Channel Power MOSFET, TO-263-7 package, featuring 60V drain-source voltage and 180A continuous drain current. Offers a low 1mΩ Rds On resistance for efficient power switching. Designed for surface mounting, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 300W. Halogen-free and RoHS compliant.
PackageTO-263-7
MountingSurface Mount
Power300W
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Technical Specifications
Infineon IPB010N06NATMA1 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 15nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 300W |
| Rds On Max | 1mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 37ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB010N06NATMA1 Datasheet
Download the complete datasheet for Infineon IPB010N06NATMA1 to view detailed technical specifications.
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