N-Channel Power MOSFET, 40V Vds, 180A continuous drain current, and 1.1mΩ on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-263-7 package for surface mounting and offers a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 175°C, it boasts low input capacitance of 20nF and is RoHS compliant.
PackageTO-263-7
MountingSurface Mount
Power250W
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Technical Specifications
Infineon IPB011N04NGATMA1 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 40V |
| Halogen Free | Halogen Free |
| Input Capacitance | 20nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 1.1mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 1.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB011N04NGATMA1 Datasheet
Download the complete datasheet for Infineon IPB011N04NGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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