This N-channel OptiMOS power MOSFET is rated for 60 V drain-source voltage and up to 180 A continuous drain current at case temperature of 25 °C. It is supplied in a TO-263-7 package and specifies a maximum drain-source on-resistance of 1.4 mΩ at VGS = 10 V. The device supports ±20 V gate-source voltage, 214 W power dissipation at TC = 25 °C, and an operating junction and storage temperature range of -55 °C to 175 °C. It is optimized for synchronous rectification, 100% avalanche tested, Pb-free lead plated, RoHS compliant, and halogen-free according to IEC61249-2-21.
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Infineon IPB014N06N technical specifications.
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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