The IPB015N04LGATMA1 is a surface mount N-channel MOSFET with a maximum continuous drain current of 120A and a maximum drain to source voltage of 40V. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The device has a fall time of 21ns and turn-on and turn-off delay times of 25ns and 108ns, respectively. It is available in a small outline R-PSSO-G2 package type.
MountingSurface Mount
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Technical Specifications
Infineon IPB015N04LGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 108ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB015N04LGATMA1 Datasheet
Download the complete datasheet for Infineon IPB015N04LGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.