N-channel Power MOSFET featuring 80V drain-source voltage and a low on-resistance of 0.0015 ohms. This single-element silicon Metal-oxide Semiconductor FET offers a continuous drain current capability of 180A. Packaged in a TO-263 (D2PAK-7/6) with 6 terminals, it is designed for high-power applications.
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Technical Specifications
Infineon IPB015N08N5ATMA1 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB015N08N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB015N08N5ATMA1 to view detailed technical specifications.
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