Infineon
IPB017N10N5
Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
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Technical Specifications
Infineon IPB017N10N5 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB017N10N5 Datasheet
Download the complete datasheet for Infineon IPB017N10N5 to view detailed technical specifications.
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