N-channel Power MOSFET featuring a low on-resistance of 0.0017 ohms and a continuous drain current capability of 180A at 100V. This single-element silicon Metal-oxide Semiconductor FET is housed in a GREEN, plastic TO-263 D2PAK-7/6 package with 6 terminals.
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Technical Specifications
Infineon IPB017N10N5ATMA1 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB017N10N5ATMA1 Datasheet
Download the complete datasheet for Infineon IPB017N10N5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.