N-Channel Power MOSFET, 80V Vds, 180A continuous drain current, and 1.9mΩ on-state resistance. Features a TO-263 surface-mount package, 175°C maximum operating temperature, and 300W power dissipation. Includes 10.7nF input capacitance and 2.8V threshold voltage. Halogen-free and RoHS compliant.
PackageTO-263
MountingSurface Mount
Power300W
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Technical Specifications
Infineon IPB019N08N3GATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.5mm |
| Input Capacitance | 10.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 1.9mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.8V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB019N08N3GATMA1 Datasheet
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