N-channel power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.002 ohms. This single-element silicon Metal-oxide Semiconductor FET offers a continuous drain current of 29A. Designed for high-power applications, it utilizes a TO-263AB package with a single terminal position. Minimum operating temperature is -55°C.
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Technical Specifications
Infineon IPB020N10N5LFATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB020N10N5LFATMA1 Datasheet
Download the complete datasheet for Infineon IPB020N10N5LFATMA1 to view detailed technical specifications.
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