N-Channel Power MOSFET, 75V drain-source voltage, 120A continuous drain current, and 0.002ohm Rds(on). This silicon, metal-oxide semiconductor FET features a TO-263 package for surface mounting. It operates within a temperature range of -55°C to 175°C, with turn-on delay of 19ns and fall time of 22ns. RoHS compliant and halogen-free.
PackageTO-263
MountingSurface Mount
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Technical Specifications
Infineon IPB020NE7N3GATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB020NE7N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB020NE7N3GATMA1 to view detailed technical specifications.
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