The IPB023N06N3G is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a maximum power dissipation of 96W and a maximum drain to source voltage of 650V. The device has a continuous drain current rating of 140A and a drain to source resistance of 2.3mR. The TO-263-7 package is suitable for surface mount applications.
PackageTO-263-7
MountingSurface Mount
PolarityN-CHANNEL
Power214W
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Technical Specifications
Infineon IPB023N06N3G technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB023N06N3G Datasheet
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