Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Infineon IPB025N08N3GXT technical specifications.
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
