N-channel Power MOSFET, 60V Vdss, 120A continuous drain current, and 3.2mΩ on-state resistance. Features a TO-263 package for surface mounting, 175°C maximum operating temperature, and 188W maximum power dissipation. Includes 10nF input capacitance, 3V threshold voltage, and fast switching times with 35ns turn-on delay and 20ns fall time. RoHS compliant and halogen-free.
PackageTO-263
MountingSurface Mount
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Technical Specifications
Infineon IPB029N06N3GATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 10nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Surface Mount |
| On-State Resistance | 3.2mR |
| Package Quantity | 1000 |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB029N06N3GATMA1 Datasheet
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