The IPB029N06N3GE8187ATMA1 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 120A and a drain to source voltage of 60V. The device features a drain to source resistance of 2.9mR and a gate to source voltage of 20V. It is packaged in a TO-263-3 case and is not RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon IPB029N06N3GE8187ATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Resistance | 2.9mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.57mm |
| Input Capacitance | 13nF |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 3.2mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.068654oz |
| Width | 9.45mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IPB029N06N3GE8187ATMA1 Datasheet
Download the complete datasheet for Infineon IPB029N06N3GE8187ATMA1 to view detailed technical specifications.
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