The IPB031NE7N3GATMA1 is a 75V surface mount MOSFET from Infineon with a maximum continuous drain current of 100A. It features a TO-263-3 package and is suitable for high-power applications. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The MOSFET has a maximum power dissipation of 214W and a maximum Rds on resistance of 3.1mR.
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Infineon IPB031NE7N3GATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 8.13nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 214W |
| Rds On Max | 3.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB031NE7N3GATMA1 to view detailed technical specifications.
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