N-Channel Power MOSFET, 80V Vdss, 100A continuous drain current, and 3.5mΩ on-state resistance. Features a TO-263 surface-mount package with a maximum operating temperature of 175°C. This silicon, metal-oxide semiconductor FET offers a 214W power dissipation and is RoHS compliant. Ideal for demanding power applications requiring high current and low on-resistance.
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Infineon IPB035N08N3GATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 3.5mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 23ns |
| RoHS | Compliant |
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