N-Channel Power MOSFET, 60V Vdss, 90A continuous drain current, and 3.7mR on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package for surface mounting, offering a maximum power dissipation of 188W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 3V threshold voltage, 8nF input capacitance, and switching times of 30ns turn-on delay and 5ns fall time. This component is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB037N06N3GATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB037N06N3GATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 3.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 188W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB037N06N3GATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
