N-Channel Power MOSFET, 60V Vdss, 90A continuous drain current, and 3.7mR on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-263 package for surface mounting, offering a maximum power dissipation of 188W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 3V threshold voltage, 8nF input capacitance, and switching times of 30ns turn-on delay and 5ns fall time. This component is RoHS compliant.
PackageTO-263
MountingSurface Mount
Power188W
Quick Jump:
Technical Specifications
Infineon IPB037N06N3GATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 3.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 188W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB037N06N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPB037N06N3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
