N-channel Power MOSFET featuring 120V drain-source voltage and 120A continuous drain current. Surface-mount D2PAK package (TO-263) with 3 pins and a tab, offering 3.8 mOhm drain-source resistance at 10V. Utilizes OptiMOS process technology with a maximum power dissipation of 300W and operates from -55°C to 175°C.
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Infineon IPB038N12N3 G technical specifications.
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.31(Max) |
| Package Width (mm) | 9.45(Max) |
| Package Height (mm) | 4.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 120V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 120A |
| Maximum Drain Source Resistance | 3.8@10VmOhm |
| Typical Gate Charge @ Vgs | 158@10VnC |
| Typical Gate Charge @ 10V | 158nC |
| Typical Input Capacitance @ Vds | 10400@60VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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