INFINEON

IPB039N10N3GATMA1

Datasheet

100V 160A N-Ch MOSFET, 3.9mR Rds On, TO-263-7

Infineon

IPB039N10N3GATMA1

Name: IPB039N10N3GATMA1 Infineon
Brand: Infineon
SKU: IPB039N10N3GATMA1

100V 160A N-Ch MOSFET, 3.9mR Rds On, TO-263-7

N-Channel Power MOSFET, 100V Vds, 160A Continuous Drain Current, 3.9mΩ Rds On. Features 214W Power Dissipation, 175°C Max Operating Temperature, and Surface Mount TO-263-7 package. Silicon Metal-oxide Semiconductor FET with 8.41nF Input Capacitance. RoHS compliant and Halogen Free.

PackageTO-263-7

MountingSurface Mount

Power214W

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Technical Specifications

Infineon IPB039N10N3GATMA1 technical specifications.

General

Package/Case	TO-263-7
Continuous Drain Current (ID)	160A
Drain to Source Voltage (Vdss)	100V
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	8.41nF
Lead Free	Contains Lead
Max Dual Supply Voltage	100V
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	214W
Mount	Surface Mount
Number of Elements	1
Packaging	Tape and Reel
Power Dissipation	214W
Rds On Max	3.9mR
RoHS Compliant	Yes
Series	OptiMOS™